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| SSM3K09FU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K09FU High Speed Switching Applications * * Small package Low on resistance : Ron = 0.7 (max) (@VGS = 10 V) : Ron = 1.2 (max) (@VGS = 4 V) Unit: mm Maximum Ratings (Ta = 25C) Characteristics Drain-Source voltage Gate-Source voltage Drain current DC Pulse Symbol VDS VGSS ID IDP PD (Note1) Tch Tstg Rating 30 20 400 800 150 150 -55~150 Unit V V mA mW C C Drain power dissipation (Ta = 25C) Channel temperature Storage temperature JEDEC JEITA SC-70 2-2E1E Note1: Mounted on FR4 board 2 (25.4 mm 25.4 mm 1.6 t, Cu Pad: 0.6 mm 3) Figure 1. TOSHIBA Weight: 0.006 g (typ.) Marking 3 Equivalent Circuit (top view) 3 Figure 1: 25.4 mm 25.4 mm 1.6 t, Cu Pad: 0.6 mm2 3 0.6 mm 1.0 mm DJ 1 2 1 2 Handling Precaution When handling individual devices (which are not yet mounting on a circuit board), be sure that the environment is protected against electrostatic electricity. Operators should wear anti-static clothing, and containers and other objects that come into direct contact with devices should be made of anti-static materials. 1 2002-01-24 SSM3K09FU Electrical Characteristics (Ta = 25C) Characteristics Gate leakage current Drain-Source breakdown voltage Drain cut-off current Gate threshold voltage Forward transfer admittance Symbol IGSS V (BR) DSS IDSS Vth 1/2Yfs1/2 Test Condition VGS = 16 V, VDS = 0 ID = 1 mA, VGS = 0 VDS = 30 V, VGS = 0 VDS = 5 V, ID = 0.1 mA VDS = 5 V, ID = 200 mA ID = 200 mA, VGS = 10 V Drain-Source ON resistance RDS (ON) ID = 200 mA, VGS = 4 V ID = 200 mA, VGS = 3.3 V Input capacitance Reverse transfer capacitance Output capacitance Switching time Turn-on time Turn-off time Ciss Crss Coss ton toff VDS = 5 V, VGS = 0, f = 1 MHz VDS = 5 V, VGS = 0, f = 1 MHz VDS = 5 V, VGS = 0, f = 1 MHz VDD = 5 V, ID = 200 mA, VGS = 0~4 V (Note2) (Note2) (Note2) (Note2) Min 3/4 30 3/4 1.1 270 3/4 3/4 3/4 3/4 3/4 3/4 3/4 3/4 Typ. 3/4 3/4 3/4 3/4 3/4 0.5 0.8 1.0 20 7 16 72 68 Max 1 3/4 1 1.8 3/4 0.7 1.2 1.7 3/4 3/4 3/4 3/4 3/4 pF pF pF ns ns W Unit mA V mA V mS Note2: Pulse test Switching Time Test Circuit (a) Test circuit Output Input 50 9 RL 0V 10% (b) VIN 4V 90% 4V 0 10 ms VDD (c) VOUT VDD 10% 90% tr ton toff tf VDD = 5 V D.U. < 1% = Input: tr, tf < 5 ns (Zout = 50 W) Common Source Ta = 25C VDS (ON) Precaution Vth can be expressed as voltage between gate and source when low operating current value is ID = 100 mA for this product. For normal switching operation, VGS (on) requires higher voltage than Vth and VGS (off) requires lower voltage than Vth. (relationship can be established as follows: VGS (off) < Vth < VGS (on) ) Please take this into consideration for using the device. VGS recommended voltage of 4.0 V or higher to turn on this product. 2 2002-01-24 SSM3K09FU ID - VDS 1000 Common Source 800 10 4 Ta = 25C 3.3 600 3.0 400 2.8 2.6 200 VGS = 2.4 V 0 0 0.5 1 1.5 2 2 1.8 RDS (ON) - ID Common Source Ta = 25C Drain-Source on resistance RDS (ON) (W) 1.6 1.4 1.2 1 0.8 0.6 0.4 0.2 0 0 200 400 600 800 1000 10 V VGS = 3.3 V 4V Drain current ID (mA) Drain-Source voltage VDS (V) Drain current ID (mA) ID - VGS 1000 Common Source VDS = 5 V 100 2 1.8 RDS (ON) - VGS Common Source ID = 200 mA Drain-Source on resistance RDS (ON) (W) 1.6 1.4 1.2 1 0.8 0.6 0.4 0.2 -25C 25C Ta = 100C (mA) 25C 10 Ta = 100C 1 -25C Drain current ID 0.1 0.01 0 1 2 3 4 0 0 2 4 6 8 10 Gate-Source voltage VGS (V) Gate-Source voltage VGS (V) 1/2Yfs1/2 - ID RDS (ON) - Ta 2 1.8 Common Source 500 ID = 200 mA 1000 Common Source VDS = 5 V Ta = 25C Forward transfer admittance 1/2Yfs1/2 (mS) 75 100 125 150 Drain-Source on resistance RDS (ON) (W) 1.6 1.4 1.2 1 0.8 0.6 0.4 0.2 0 -25 0 25 50 10 V VGS = 3.3 V 4V 300 100 50 30 10 10 30 50 100 300 500 1000 Ambient temperature Ta (C) Drain current ID (mA) 3 2002-01-24 SSM3K09FU Vth - Ta 2 1000 Common Source 1.8 IDR - VDS Common Source VGS = 0 Ta = 25C D 600 G S 400 IDR (mA) Drain Reveres current IDR (V) ID = 0.1 mA VDS = 5 V 1.6 1.4 1.2 1 0.8 0.6 0.4 0.2 0 -25 0 25 50 75 800 Gate threshold voltage Vth 200 100 125 150 0 0 -0.2 -0.4 -0.6 -0.8 -1 -1.2 -1.4 Ambient temperature Ta (C) Drain-Source voltage VDS (V) C - VDS 500 Common Source VGS = 0 V f = 1 MHz Ta = 25C 5000 t - ID Common Source VDD = 5 V VGS = 0~4 V Ta = 25C (pF) Capacitance C t (ns) 100 1000 Ciss 10 Coss Switching time toff tf 100 ton tr Crss 1 0.1 10 1 1 10 100 10 100 1000 Drain-Source voltage VDS (V) Drain current ID (mA) PD - Ta 200 Mounted on FR4 board (25.4 mm 25.4 mm 1.6 t 2 Cu pad: 0.6 mm 3) Figure 1 150 Power dissipation PD 100 50 0 0 (mW) 20 40 60 80 100 120 140 160 Ambient temperature Ta (C) 4 2002-01-24 SSM3K09FU RESTRICTIONS ON PRODUCT USE 000707EAA * TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc.. * The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer's own risk. * The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. * The information contained herein is subject to change without notice. 5 2002-01-24 |
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